Ιδρυματικό Αποθετήριο
Πολυτεχνείο Κρήτης
Πολυτεχνείο Κρήτης
EN
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| URI: | http://purl.tuc.gr/dl/dias/2190DF60-9231-463F-8E6F-878E8B185832 | ||
| Έτος | 2018 | ||
| Τύπος | Δημοσίευση σε Περιοδικό με Κριτές | ||
| Άδεια Χρήσης |
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| Βιβλιογραφική Αναφορά | F. Jazaeri, N. Makris, A. Saeidi. M. Bucher and J.-M. Sallese, "Charge-based model for junction FETs," IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2694-2698, July 2018. doi: 10.1109/TED.2018.2830972 https://doi.org/10.1109/TED.2018.2830972 | ||
| Εμφανίζεται στις Συλλογές |
We present a unified charge-based model for double-gate and cylindrical architectures of junction field-effect transistors (JFETs). The central concept is to consider the JFET as a junctionless FET (JLFET) with an infinitely thin insulating layer, leading to analytical expressions between charge densities, current, and voltages without any fitting parameters. Assessment of the model with numerical technology computer-aided design simulations confirms that holding the JFET as a special case of the JLFET is justified in all the regions of operation, i.e., from deep depletion to flat-band and from linear to saturation.
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